Area of research
Electrical and Electronic Engineering · Atomic and Molecular Physics, and Optics
Research interest
Research interests include Materials science, Amorphous solid, Electron, Capacitor, Trapping, and Optoelectronics.
Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory
Evidence of Heat‐Assisted Atomic Migration in GeSe Self‐Selecting Memory at High Operating Current Density
Electron emission from deep traps in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>HfO</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> under thermal and optical excitation
Capacitive Memory Window With Non-Destructive Read in Ferroelectric Capacitors
Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch
Study of Contact Resistance Components in Short-Channel Indium-Gallium-Zinc-Oxide Transistor
Polarity‐Induced Threshold Voltage Shift in Ovonic Threshold Switching Chalcogenides and the Impact of Material Composition
Hole-doping induced ferromagnetism in 2D materials
Polarity-dependent threshold voltage shift in ovonic threshold switches: Challenges and opportunities
Ovonic Threshold‐Switching Ge<sub><i>x</i></sub>Se<sub><i>y</i></sub> Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles
The origin of negative charging in amorphous Al<sub>2</sub>O<sub>3</sub> films: the role of native defects
Material-Selective Doping of 2D TMDC through Al<i><sub>x</sub></i>O<i><sub>y</sub></i> Encapsulation
A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From <inline-formula> <tex-math notation="LaTeX">${I}$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math> </inline-formula>, <inline-formula> <tex-math notation="LaTeX">${C}$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math> </inline-formula>, and <
Intrinsic charge trapping in amorphous oxide films: status and challenges
Two-Dimensional Crystal Grain Size Tuning in WS<sub>2</sub> Atomic Layer Deposition: An Insight in the Nucleation Mechanism
Intrinsic electron trapping in amorphous oxide
Interactions of hydrogen with amorphous hafnium oxide
Silicene on non-metallic substrates: Recent theoretical and experimental advances
Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes
Controlled Sulfurization Process for the Synthesis of Large Area MoS<sub>2</sub> Films and MoS<sub>2</sub>/WS<sub>2</sub> Heterostructures
Conduction barrier offset engineering for DRAM capacitor scaling
Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study
Identification of intrinsic electron trapping sites in bulk amorphous silica from ab initio calculations