Area of research
Electrical and Electronic Engineering · Materials Chemistry
Research interest
Research interests include Stack (abstract data type), Materials science, Polarity (international relations), Resistive random-access memory, Non-volatile memory, and Computer science.
Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory
Evidence of Heat‐Assisted Atomic Migration in GeSe Self‐Selecting Memory at High Operating Current Density
Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch
Polarity‐Induced Threshold Voltage Shift in Ovonic Threshold Switching Chalcogenides and the Impact of Material Composition
Polarity-dependent threshold voltage shift in ovonic threshold switches: Challenges and opportunities
Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM
A-VMCO: A novel forming-free, self-rectifying, analog memory cell with low-current operation, nonfilamentary switching and excellent variability
Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell