Attilio Belmonte

La Doped HZO-Based 3D-Trench Metal-Ferroelectric-Metal Capacitors With High-Endurance (>10¹²) for FeRAM Applications

Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory

Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line Compatibility

Fundamental understanding of NBTI degradation mechanism in IGZO channel devices

Evidence of Heat‐Assisted Atomic Migration in GeSe Self‐Selecting Memory at High Operating Current Density

Study of Contact Resistance Components in Short-Channel Indium-Gallium-Zinc-Oxide Transistor

A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From <inline-formula> <tex-math notation="LaTeX">${I}$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math> </inline-formula>, <inline-formula> <tex-math notation="LaTeX">${C}$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math> </inline-formula>, and &lt

Recommended Methods to Study Resistive Switching Devices

Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories

Causes and consequences of the stochastic aspect of filamentary RRAM

Understanding the Dual Nature of the Filament Dissolution in Conductive Bridging Devices

Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices

RRAMs based on anionic and cationic switching: a short overview

Improvement of data retention in HfO<inf>2</inf>/Hf 1T1R RRAM cell under low operating current

A Thermally Stable and High-Performance 90-nm ${\rm Al}_{2}{\rm O}_{3}\backslash{\rm Cu}$-Based 1T1R CBRAM Cell

Influence of Carbon Alloying on the Thermal Stability and Resistive Switching Behavior of Copper-Telluride Based CBRAM Cells