Area of research
Materials Chemistry · Electrical and Electronic Engineering
Research interest
Research interests include Materials science, Optoelectronics, Condensed matter physics, Thermoelectric effect, Computer science, and Transistor.
Unveiling Ferroelectric HZO Cryogenic Performance (4–300 K): Kinetic Barrier Engineering and Underlying Mechanism
First Demonstration of BEOL-Compatible Co-Sputter Deposited $\text{Te}_{1-x} \text{Se}_{x}$ p-FETs Enabling 3D Stackable Oxide Semiconductor CFET, DRAM, and First CFET-Structured SRAM
Deterministic spin-orbit torque switching including the interplay between spin polarization and kagome plane in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Mn</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mi>Sn</mml:mi></mml:mrow></mml:math>
Exploring the Impact of Channel Thickness Scaling on PBTI and Low-Frequency Noise in Ultrathin IGZO Transistors
Unveiling the Impact of AC PBTI on Hydrogen Formation in Oxide Semiconductor Transistors
Revealing the Impact of Hydrogen (H) on NBTI/PBTI of IGZTO FETs Under DC and AC Stress: Deep Dive into H Dynamics and Advanced Modeling
Unconventional computing based on magnetic tunnel junction
Probabilistic-Bits Based on Ferroelectric Field-Effect Transistors for Probabilistic Computing
Unveiling the Influence of Channel Thickness on PBTI and LFN in Sub-10 nm-thick IGZO FETs: A Holistic Perspective for Advancing Oxide Semiconductor Devices
Exploring Low Power and Ultrafast Memristor on p-Type van der Waals SnS
Ultrafast and energy-efficient spin–orbit torque switching in compensated ferrimagnets
High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection
All-electric magnetization switching and Dzyaloshinskii–Moriya interaction in WTe2/ferromagnet heterostructures
Single Atomically Sharp Lateral Monolayer p‐n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency
Theoretical study of thermoelectric properties of few-layer MoS2 and WSe2
Thermoelectric performance of MX2 (M = Mo,W; X = S,Se) monolayers
Spin-dependent thermoelectric effects in graphene-based spin valves