Area of research
Electrical and Electronic Engineering
Research interest
Research interests include Semiconductor materials and devices, Ferroelectric and Negative Capacitance Devices, Advanced Memory and Neural Computing, and Advancements in Semiconductor Devices and Circuit Design.
Ferroelectric capacitive memories: devices, arrays, and applications
Unveiling Ferroelectric HZO Cryogenic Performance (4–300 K): Kinetic Barrier Engineering and Underlying Mechanism
First Demonstration of BEOL-Compatible Co-Sputter Deposited $\text{Te}_{1-x} \text{Se}_{x}$ p-FETs Enabling 3D Stackable Oxide Semiconductor CFET, DRAM, and First CFET-Structured SRAM
High-concentration contrast media combined with low tube current for radiation dose reduction in head and neck computed tomography angiography: A prospective study
Thin film ferroelectric photonic-electronic memory
Comprehensive Experiments and Modeling Applicable for Ferroelectric Transistors With an MFMIS Structure and a Wide Range of Area Ratios: Unveiling the Operation Mechanisms
Exploring the Impact of Channel Thickness Scaling on PBTI and Low-Frequency Noise in Ultrathin IGZO Transistors
BEOL-Compatible MFMIS Ferroelectric/ Anti-ferroelectric FETs—Part II: Mechanism With Load Line Analysis and Scaling Strategy
BEOL Three-Dimensional Stackable Oxide Semiconductor CMOS Inverter with a High Voltage Gain of 233 at Cryogenic Temperatures
Low-Power and Scalable BEOL-Compatible IGZO TFT eDRAM-Based Charge-Domain Computing
BEOL-Compatible MFMIS Ferroelectric/Anti-Ferroelectric FETs—Part I: Experimental Results With Boosted Memory Window
Unveiling the Influence of Channel Thickness on PBTI and LFN in Sub-10 nm-thick IGZO FETs: A Holistic Perspective for Advancing Oxide Semiconductor Devices
Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High C<sub>HCS</sub>/C<sub>LCS</sub>, Fast Speed, and Long Retention
Novel a-IGZO Anti-Ferroelectric FET LIF Neuron with Co-Integrated Ferroelectric FET Synapse for Spiking Neural Networks
New Insights into the Impact of Hydrogen Evolution on the Reliability of IGZO FETs: Experiment and Modeling
Boosting the Memory Window of the BEOL-Compatible MFMIS Ferroelectric/ Anti-Ferroelectric FETs by Charge Injection
Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High G<sub>m</sub> of 479.5 μS/μm (V<sub>DS</sub> of 1 V) and f<sub>T</sub> of 18.3 GHz (V<sub>DS</sub> of 3 V)
Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure
Al-doped and Deposition Temperature-engineered HfO<sub>2</sub> Near Morphotropic Phase Boundary with Record Dielectric Permittivity (~68)