Area of research
Electrical and Electronic Engineering · Materials Chemistry
Research interest
Research interests include Materials science, Ferroelectricity, Optoelectronics, Transistor, Computer science, and Capacitive sensing.
Ferroelectric capacitive memories: devices, arrays, and applications
Hydrogen-Related Instability of IGZO Field-Effect Transistors
Thin film ferroelectric photonic-electronic memory
Comprehensive Experiments and Modeling Applicable for Ferroelectric Transistors With an MFMIS Structure and a Wide Range of Area Ratios: Unveiling the Operation Mechanisms
Transposable Memory Based on the Ferroelectric Field-Effect Transistor
BEOL-Compatible MFMIS Ferroelectric/ Anti-ferroelectric FETs—Part II: Mechanism With Load Line Analysis and Scaling Strategy
BEOL-Compatible MFMIS Ferroelectric/Anti-Ferroelectric FETs—Part I: Experimental Results With Boosted Memory Window
Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High C<sub>HCS</sub>/C<sub>LCS</sub>, Fast Speed, and Long Retention
Novel a-IGZO Anti-Ferroelectric FET LIF Neuron with Co-Integrated Ferroelectric FET Synapse for Spiking Neural Networks
New Insights into the Impact of Hydrogen Evolution on the Reliability of IGZO FETs: Experiment and Modeling
Boosting the Memory Window of the BEOL-Compatible MFMIS Ferroelectric/ Anti-Ferroelectric FETs by Charge Injection
Al-doped and Deposition Temperature-engineered HfO<sub>2</sub> Near Morphotropic Phase Boundary with Record Dielectric Permittivity (~68)