Area of research
Electrical and Electronic Engineering
Research interest
Research focused on Ferroelectricity and Optoelectronics, with related work in Notation, Amorphous solid, Glutathione. Notable publications include 'Amorphous IGZO TFTs Featuring Extremely-Scaled Channel Thickness and 38 nm Channel Length: Achieving Record High Gm,max of 125 μS/μm at VDS of 1 V and ION of 350 μA/μm', 'Physiological and transcriptomic study reveal SeNPs-mediated AsIII stress detoxification mechanisms involved modulation of antioxidants, metal transporters, and transcription...', and 'Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure'.
Ferroelectric capacitive memories: devices, arrays, and applications
Valorization of sewage sludge ash into sustainable porous geopolymer: Dual functions as supplementary foaming agent and precursor
Flexible InGaAs/InAlAs avalanche photodiodes for short-wave infrared detection
Unveiling Ferroelectric HZO Cryogenic Performance (4–300 K): Kinetic Barrier Engineering and Underlying Mechanism
Thin film ferroelectric photonic-electronic memory
Comprehensive Experiments and Modeling Applicable for Ferroelectric Transistors With an MFMIS Structure and a Wide Range of Area Ratios: Unveiling the Operation Mechanisms
Exploring the Impact of Channel Thickness Scaling on PBTI and Low-Frequency Noise in Ultrathin IGZO Transistors
Unveiling the Impact of AC PBTI on Hydrogen Formation in Oxide Semiconductor Transistors
A Compact Model for BEOL-Compatible Ferroelectric Thin Film Transistors With Metal/Ferroelectric/Semiconductor Structure
BEOL-Compatible MFMIS Ferroelectric/ Anti-ferroelectric FETs—Part II: Mechanism With Load Line Analysis and Scaling Strategy
Revealing the Impact of Hydrogen (H) on NBTI/PBTI of IGZTO FETs Under DC and AC Stress: Deep Dive into H Dynamics and Advanced Modeling
Low-Power and Scalable BEOL-Compatible IGZO TFT eDRAM-Based Charge-Domain Computing
BEOL-Compatible MFMIS Ferroelectric/Anti-Ferroelectric FETs—Part I: Experimental Results With Boosted Memory Window
Unveiling the Influence of Channel Thickness on PBTI and LFN in Sub-10 nm-thick IGZO FETs: A Holistic Perspective for Advancing Oxide Semiconductor Devices
Physiological and transcriptomic study reveal SeNPs-mediated AsIII stress detoxification mechanisms involved modulation of antioxidants, metal transporters, and transcription factors in Glycine max L. (Merr.) roots
Novel a-IGZO Anti-Ferroelectric FET LIF Neuron with Co-Integrated Ferroelectric FET Synapse for Spiking Neural Networks
New Insights into the Impact of Hydrogen Evolution on the Reliability of IGZO FETs: Experiment and Modeling
Boosting the Memory Window of the BEOL-Compatible MFMIS Ferroelectric/ Anti-Ferroelectric FETs by Charge Injection
Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High G<sub>m</sub> of 479.5 μS/μm (V<sub>DS</sub> of 1 V) and f<sub>T</sub> of 18.3 GHz (V<sub>DS</sub> of 3 V)
Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure
Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length
Indium-Gallium-Zinc-Oxide (IGZO) Nanowire Transistors
Amorphous IGZO TFTs Featuring Extremely-Scaled Channel Thickness and 38 nm Channel Length: Achieving Record High Gm,max of 125 μS/μm at VDS of 1 V and ION of 350 μA/μm
Preparation and Characterization of Core–Shell Composite Zeolite BEA@MFI and Their Catalytic Properties in ESR
Pt nanoparticles encapsulated in a hollow zeolite microreactor as a highly active and stable catalyst for low-temperature ethanol steam reforming
Yolk-shell structured Pt-CeO2@Ni-SiO2 as an efficient catalyst for enhanced hydrogen production from ethanol steam reforming